mega power dual igbtmod? 900 amperes/1200 volts CM900DUC-24NF 1 01/10 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com outline drawing and circuit diagram a d p (8 places) l l m h h h h h h k g u h h e f f e2 c2 c2e1 c1 g2 e1 e2 g1 c1 v bb cc b c j j g g r (9 places) c2e1 e2 g2 e2 e1 g1 c2 tr2 di2 di1 label u w s n x y z aa c1 c1 t tr1 description: powerex mega power dual (mpd) modules are designed for use in switching applications. each module consists of two igbt transistors having a reverse- connected super-fast recovery free-wheel diode. all components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. features: low drive power low v ce(sat) discrete super-fast recovery free-wheel diode isolated baseplate for easy heatsinking rohs compliant applications: high power dc power supply large dc motor drives utility interface inverters ordering information: example: select the complete module number you desire from the table - i.e. CM900DUC-24NF is a 1200v (v ces ), 900 ampere dual igbtmod power module. current rating v ces type amperes volts (x 50) cm 900 24 dimensions inches millimeters m 0.0750.008 1.90.2 n 0.47 12.0 p 0.26 6.5 r m6 metric m6 s 0.08 2.0 t 0.99 25.1 u 0.62 15.7 v 0.71 18.0 w 0.75 19.0 x 0.43 11.0 y 0.83 21.0 z 0.41 10.5 aa 0.22 5.5 dimensions inches millimeters a 5.91 150.0 b 5.10 129.5 c 1.670.01 42.50.25 d 5.410.01 137.50.25 e 6.54 166.0 f 2.910.01 74.00.25 g 1.65 42.0 h 0.55 14.0 j 1.500.01 38.00.25 k 0.16 4.0 l 1.36 +0.04/-0.02 34.6 +1.0/-0.5 housing type (j.s.t. mfg. co. ltd) bb = vhr-2n cc = vhr-5n
CM900DUC-24NF mega power dual igbtmod? 900 amperes/1200 volts 2 01/10 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com absolute maximum ratings, t j = 25c unless otherwise specifed ratings symbol CM900DUC-24NF units junction temperature t j -40 to 150 c storage temperature t stg -40 to 125 c collector-emitter voltage (g-e short) v ces 1200 volts gate-emitter voltage (c-e short) v ges 20 volts collector current dc (t c = 96c) *1 i c 900 amperes peak collector current (pulse, t j 150c) *4 i cm 1800 amperes emitter current (t c = 25c) i e *3 900 amperes peak emitter current (pulse) *4 i em *3 1800 amperes maximum collector dissipation (t j < 150c, t c = 25c) *1 p c 5900 watts mounting torque, m6 mounting screws C 40 in-lb (max.) mounting torque, m6 main terminal screw C 40 in-lb (max.) weight (typical) C 1450 grams isolation voltage (main terminal to baseplate, ac 1 min.) v iso 2500 volts *1 case temperaturet c and heatsink temperature (t f ) measured point is just under the chips. *3 i e , i em , v ec , i fsm , i 2 t, t rr , q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *4 pulse width and repetition rate should be such that device junction temperature (t j ) does not exceed t j(max) rating.
CM900DUC-24NF mega power dual igbtmod? 900 amperes/1200 volts 3 01/10 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com electrical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units collector-cutoff current i ces v ce = v ces , v ge = 0v C C 1 ma gate-emitter threshold voltage v ge(th) i c = 90ma, v ce = 10v 6 7 8 volts gate leakage current i ges v ge = v ges , v ce = 0v C C 1.0 a collector-emitter saturation voltage (chip) v ce(sat) i c = 900a, v ge = 15v, t j = 25c *6 C 1.8 2.5 volts (without lead resistance) i c = 900a, v ge = 15v, t j = 125c *6 C 2.0 C volts module lead resistance r (lead) i c = 900a, terminal-chip C 0.286 C m input capacitance c ies C C 140 nf output capacitance c oes v ce = 10v, v ge = 0v C C 16 nf reverse transfer capacitance c res C C 3 nf total gate charge q g v cc = 600v, i c = 900a, v ge = 15v C 4800 C nc inductive turn-on delay time t d(on) v cc = 600v, i c = 900a, C C 600 ns load rise time t r v ge1 = v ge2 = 15v, C C 200 ns switch turn-off delay time t d(off) r g = 0.35, inductive load C C 800 ns times fall time t f switching operation C C 300 ns reverse recovery time t rr *3 i e = 900a C C 500 ns reverse recovery charge q rr *3 C 50 C c emitter-collector voltage (chip) v ec *3 i e = 900a, v ge = 0v *6 C C 3.2 volts (without lead resistance) external gate resistance r g 0.35 C 2.2 thermal and mechanical characteristics, t j = 25c unless otherwise specifed characteristics symbol test conditions min. typ. max. units thermal resistance, junction to case *1 r th(j-c) q per igbt (1/2 module) C C 0.021 c/w thermal resistance, junction to case *1 r th(j-c) d per clamp diode (1/2 module) C C 0.034 c/w contact thermal resistance *1 r th(c-f) thermal grease applied (1/2 module) C 0.012 C c/w *1 case temperaturet c and heatsink temperature (t f ) measured point is just under the chips. *3 i e , i em , v ec , i fsm , i 2 t, t rr , q rr represent ratings and characteristics of the anti-parallel, emitter-to-collector free-wheel diode (fwdi). *6 pulse width and repetition rate should be such as to cause negligible teperature rise.
CM900DUC-24NF mega power dual igbtmod? 900 amperes/1200 volts 4 01/10 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com collector-emitter voltage, v ce , (volts) capacitance, c ies , c oes , c res , (nf) capacitance vs. v ce (typical) 10 0 10 2 10 3 10 2 10 1 10 -1 10 0 10 1 0.5 1.5 1.0 3.0 3.5 2.0 2.5 4.0 10 2 emitter-collector voltage, v ec , (volts) free-wheel diode forward characteristics (typical) 10 3 10 4 emitter current, i e , (amperes) gate-emitter voltage, v ge , (volts) collector-emitter saturation voltage, v ce(sat) , (volts) collector-emitter saturation voltage characteristics (typical) 10 0 4 8 12 16 20 8 6 4 2 0 t j = 25c collector-current, i c , (amperes) collector-emitter saturation voltage, v ce(sat) , (volts ) collector-emitter saturation voltage characteristics (typical) 5 3 4 0 400 2 1 0 2000 800 1200 1600 v ge = 15v t j = 25c t j = 125c t j = 25c t j = 125c v ge = 0v c ies c oes c res i c = 360a i c = 1800a i c = 900a collector-emitter voltage, v ce , (volts) collector current, i c , (amperes) output characteristics (typical) 0 2 4 6 8 10 v ge = 20v 10 11 12 15 13 9 8 t j = 25 c collector current, i c , (amperes) 0 1200 1400 200 1000 800 600 400 1600 1800 0 1200 1400 200 1000 800 600 400 1600 1800 gate-emitter voltage, v ge , (volts) transfer characteristics (typical) 0 8 12 16 20 v ce = 10v t j = 25c t j = 125c 4 10 -1 collector current, i c , (amperes) 10 3 10 1 10 2 10 2 10 1 switching time, (ns) t d(off) t d(on) t r v cc = 600v v ge = 15v r g = 0.35? t j = 125c inductive load t f emitter current, i e , (amperes) reverse recovery time, t rr , (ns) 10 3 10 2 10 3 10 2 10 1 10 3 10 2 10 1 reverse recovery current, i rr , (amperes) t rr i rr v cc = 600v v ge = 15v r g = 0.35? t j = 25c inductive load 10 3 10 4 half-bridge switching characteristics (typical) gate resistance, r g , () 10 3 10 -1 10 0 10 2 10 1 switching time, (ns) t d(off) t d(on) t r v cc = 600v v ge = 15v i c = 900a t j = 125c inductive load t f 10 1 half-bridge switching characteristics (typical) reverse recovery characteristics (typical)
CM900DUC-24NF mega power dual igbtmod? 900 amperes/1200 volts 5 01/10 rev. 0 powerex, inc., 173 pavilion lane, youngwood, pennsylvania 15697 (724) 925-7272 www.pwrx.com emitter current, i e , (amperes) 10 1 10 2 10 3 10 -1 10 0 10 1 10 -1 10 0 10 1 10 1 10 2 10 3 v cc = 600v v ge = 15v t j = 125c r g = 0.35? inductive load collector current, i c , (amperes) switching loss, e on , e off , (mj/pulse) 10 1 10 2 10 3 10 1 10 2 10 3 v cc = 600v v ge = 15v t j = 125c r g = 0.35? e on e off inductive load gate resistance, r g , (?) v cc = 600v v ge = 15v t j = 125c i c = 900a inductive load gate resistance, r g , (?) switching loss, e on , e off , (mj/pulse) 10 1 10 2 10 3 v cc = 600v v ge = 15v t j = 125c i c = 900a e on e off inductive load 10 1 10 2 10 3 switching loss, e rr , (mj/pulse) reverse recovery energy vs. forward current (typical) switching loss vs. collector current (typical) switching loss, e rr , (mj/pulse) reverse recovery energy vs. external gate resistance (typical) switching energy vs. external gate resistance (typical) time, (s) 10 -5 10 -4 10 -3 10 -1 10 -2 10 -3 10 -3 10 -2 10 -1 10 0 10 1 z th = r th ? (normalized value) transient thermal impedance characteristics (igbt & clamp diode) 10 0 normalized transient thermal impedance, z th(j-c) single pulse t c = 25c per unit base r th(j-c') = 0.021c/w (igbt) r th(j-c') = 0.034c/w (clamp) gate charge, q g , (nc) gate-emitter voltage, v ge , (volts) 20 0 16 12 8 4 0 1000 2000 7000 5000 6000 4000 3000 v cc = 600v v cc = 400v i c = 900a gate charge, v ge
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